PART |
Description |
Maker |
TD62S350AFM |
1-Channel Darlington Source-Current Driver
|
TOSHIBA
|
M54562P M54562P/FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
|
M54562FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE
|
Mitsubishi Electric Semiconductor
|
M54563FP M54563P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MCA002 |
MULTI-CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL MOSFETS
|
SEME-LAB Seme LAB
|
M54580 M54580P99 |
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY IC,PERIPHERAL DRIVER,7 DRIVER,BIPOLAR,DIP,16PIN,PLASTIC
|
Mitsubishi Electric Semiconductor
|
IS725 |
HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
|
Isocom Components, Ltd.
|
DS442209 DS4422N |
Two-/Four-Channel, I<sup>2</sup>C, 7-Bit Sink/Source Current DAC SERIAL INPUT LOADING, 7-BIT DAC, DSO14 Two-/Four-Channel, I2C, 7-Bit Sink/Source Current DAC
|
Maxim Integrated Products, Inc.
|
STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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Electronics Industry Public Company Limited EIC Semiconductor EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
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